IRFV260 datasheet(3/4 Pages) IRF

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Thermal Resistance

Parameter

Min. Typ. Max. Units Test Conditions

RthJC

Junction-to-Case

—

0.42

RthJA

Junction-to-Ambient

—

K/W

typical socket mount

RthCS

Case-to-Sink

—

0.21

—

mounting surface flat, smooth

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

—

45*

Modified MOSFET symbol showing the

ISM

Pulse Source Current (Body Diode)

—

180

integral reverse p-n junction rectifier.

VSD Diode Forward Voltage

—

1.8

Tj = 25°C, IS = 45A, VGS = 0V

trr

Reverse Recovery Time

—

420

Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

4.9

µCVDD ≤ 50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by LS + LD.

IRFV260 Device

Repetitive Rating; Pulse width limited by

maximum junction temperature.

@ VDD = 50V, Starting TJ = 25°C,

EAS = [0.5 * L * (I

2) * [BVDSS/(BVDSS-VDD)]

Peak IL = 45A, VGS = 10V, 25 ≤ RG ≤ 200Ω

ISD ≤ 45A, di/dt ≤ 130 A/µs,

VDD ≤ BVDSS, TJ ≤ 150°C

Suggested RG = 2.35

Ω

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

K/W = °C/W

W/K = W/°C

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