IRFV260 datasheet(2/4 Pages) IRF

2 / 4 page

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

200

—

VGS = 0V, ID = 1.0 mA

∆BVDSS/∆TJ Temp. Coefficient of Breakdown Voltage —

0.24

—

V/°C

Reference to 25°C, ID = 1.0 mA

RDS(on)

Static Drain-to-Source

—

0.060

VGS = 10V, ID =29A

On-State Resistance

—

0.068

Ω

VGS = 10V, ID = 45A

VGS(th)

Gate Threshold Voltage

2.0

—

4.0

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

—

S (

)VDS ≥ 15V, IDS = 29A

IDSS

Zero Gate Voltage Drain Current

—

µA

VDS=0.8 x Max Rating,VGS=0V

—

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

-100

VGS = -20V

Q g

Total Gate Charge

—

230

VGS =10V, ID = 45A

Q gs

Gate-to-Source Charge

—

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain (“Miller”) Charge

—

110

td(on)

Turn-On Delay Time

—

VDD = 100V, ID =45A,

t r

Rise Time

—

120

RG = 2.35Ω, VGS =10V

td(off)

Turn-Off Delay Time

—

110

Fall Time

—

Internal Drain Inductance

—

8.7

—

Internal Source Inductance

—

8.7

—

Ciss

Input Capacitance

—

5100

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

1100

—

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

—

280

—

IRFV260 Device

Measuredfromthe

drainlead,6mm(0.25

in.) from package to

center of die.

Measuredfromthe

sourcelead,6mm

(0.25in.)frompackage

tosourcebondingpad.

ModifiedMOSFET

symbolshowingthe

internalinductances.

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