IRFZ34N

PD - _____

8/29/95

Fifth Generation HEXFETs from International Rectifier utilize advanced processing

techniques to achieve the lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial

applications at power dissipation levels to approximately 50 watts.

The low

thermal resistance and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Description

PRELIMINARY

Absolute Maximum Ratings

Parameter

Max.

Units

26

18

A

Pulsed Drain Current

100

Power Dissipation

56

W

Linear Derating Factor

0.37

W/°C

Gate-to-Source Voltage

±20

V

Single Pulse Avalanche Energy

110

mJ

Avalanche Current

16

A

Repetitive Avalanche Energy

5.6

mJ

dv/dt

Peak Diode Recovery dv/dt

4.6

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Mounting torque, 6-32 or M3 screw.

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

Junction-to-Case

––––

––––

2.7

Case-to-Sink, Flat, Greased Surface

––––

0.50

––––

°C/W

Junction-to-Ambient

––––

––––

62

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated