©

1999

DATA SHEET

Document No. S13908EJ1V0DS00 (1st edition)

Date Published July 1999 N CP(K)

Printed in Japan

MOS INTEGRATED CIRCUIT

MONOLITHIC 6 channel H-BRIDGE DRIVER

DESCRIPTION

µPD16857 is monolithic 6 channel H-bridge driver employing power MOS FETs in the output stages. The MOS

FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers

using bipolar transistors.

In addition, a low-voltage malfunction prevention circuit is also provided that prevents the IC from malfunctioning

when the supply voltage drops. A 30-pin plastic shrink SOP package is adopted to help create compact and slim

application sets.

In the output stage H bridge circuits, two low-ON resistance H-bridge circuits for driving actuators, and another

three channels for driving sled motors and tilt control, and another channel for driving loading motor are provided,

making the product ideal for applications in DVD-ROM/DVD-RAM.

FEATURES

•

Six H-bridge outputs employing power MOS FETs.

•

High speed PWM drive corresponding: Operating input frequency 120 kHz (MAX.)

•

Low voltage malfunction prevention circuit: Operating control block voltage under 2.5 V (TYP.)

•

Loading into 38-pin shrink SOP (300 mil).

Parameter

Symbol

Condition

Rating

Unit

Control block supply voltage

–0.5 to +6.0

V

Output block supply voltage

–0.5 to +13.5

V

Input voltage

V

Output current

PW

≤ 5 ms, Duty ≤ 20 %

±1.0

A/ch

1.0

W

Peak junction temperature

150

°C

Storage temperature range

–55 to +150

°C

Note

When mounted on a glass epoxy board (10 cm

× 10 cm × 1 mm, 15 % copper foil)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability

and additional information.