IRG4PSC71UD

4

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Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Typical Collector-to-Emitter Voltage

vs. Junction Temperature

Fig. 4 - Maximum Collector Current vs.

Case

Temperature

-60 -40 -20

0

20

40

60

80 100 120 140 160

1.0

2.0

3.0

T , Junction Temperature ( C)

J

°

V

= 15V

80 us PULSE WIDTH

GE

I =

A

120

C

I =

A

60

C

I =

A

30

C

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

1 0

1 0 0

1

t , R e cta n g ular Pu ls e D u ra tion (se c)

A

D = 0.50

0.20

0.10

0.05

0.02

0.0 1

S IN G L E P U L S E

(T H E R M AL R ESPON SE)

P

t2

1

t

DM

Notes:

1. Duty factor D = t

/ t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJC

C

0

20

40

60

80

100

25

50

75

100

125

150

T

, C a s e T e m p e ra tu re (°C )

C

A

V

= 1 5 V

L IMIT E D BY PAC KAGE

GE