IRG4RC10S

8/30/99

www.irf.com

1

INSULATED GATE BIPOLAR TRANSISTOR

Standard Speed IGBT

D-PAK

TO-252AA

Parameter

Max.

Units

Collector-to-Emitter Breakdown Voltage

600

V

Continuous Collector Current

14

Continuous Collector Current

8.0

A

Pulsed Collector Current



18

Clamped Inductive Load Current

‚

18

Gate-to-Emitter Voltage

± 20

V

Reverse Voltage Avalanche Energy

ƒ

110

mJ

Maximum Power Dissipation

38

Maximum Power Dissipation

15

Operating Junction and

-55 to + 150

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (0.063 in. (1.6mm) from case )

°C

Absolute Maximum Ratings

W

Features

• Extremely low voltage drop; 1.0V typical at 2A, 100°C

• Standard: Optimized for minimum saturation

voltage and low operating frequencies ( < 1kHz)

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

• Industry standard TO-252AA package

• Generation 4 IGBT's offer highest efficiency available

• IGBT's optimized for specified application conditions

Benefits

Thermal Resistance

°C/W

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

3.3

Junction-to-Ambient (PCB mount)*

–––

50

Wt

Weight

0.3 (0.01)

–––

g (oz)

* When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994

E

C

G

n-channel

PD - 91732A