Thermal Resistance

Parameter

Min Typ Max

Units

Test Conditions

RthJC

Junction-to-Case

—

—

0.83

RthJA

Junction-to-Ambient

—

—

48

K/W

…

RthCS

Case-to-Sink

—

0.21

—

Typical socket mount

Parameter

Min

Typ

Max Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

600

—

—

V

VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJ Temperature Coefficient of Breakdown

—

0.45

—

V/°C

Reference to 25°C, ID = 1.0mA

Voltage

RDS(on)

Static Drain-to-Source

—

—

0.60

VGS = 12V, ID =6.5A

On-State Resistance

—

—

0.65

Ω

VGS = 12V, ID = 10.4A

VGS(th)

Gate Threshold Voltage

2.5

—

4.5

V

VDS = VGS, ID = 1.0mA

gfs

Forward Transconductance

3.0

—

—

S ( )VDS > 15V, IDS = 6.5A „

IDSS

Zero Gate Voltage Drain Current

—

—

50

VDS= 0.8 x Max Rating,VGS=0V

—

—

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

—

—

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

—

—

-100

VGS = -20V

Qg

Total Gate Charge

—

—

150

VGS =12V, ID = 10.4A

Qgs

Gate-to-Source Charge

—

—

30

nC

VDS = Max Rating x 0.5

Qgd

Gate-to-Drain (‘Miller’) Charge

—

—

75

Turn-On Delay Time

—

—

55

VDD = 300V, ID = 10.4A,

tr

Rise Time

—

—

190

RG = 2.35Ω

Turn-Off Delay Time

—

—

210

tf

Fall Time

—

—

130

LD

Internal Drain Inductance

—

8.7

—

LS

Internal Source Inductance

—

8.7

—

Ciss

Input Capacitance

—

2700

—

VGS = 0V, VDS = 25V

Coss

Output Capacitance

—

300

—

pF

f = 1.0MHz

Crss

Reverse Transfer Capacitance

—

61

—

nA

IRHM2C50SE, IRHM7C50SE Devices

Pre-Radiation

„

nH

ns

Measured from drain lead,

6mm (0.25 in) from package

to center of die.

Measured from source lead,

6mm (0.25 in) from package

to source bonding pad.

Modified MOSFET symbol show-

ing the internal inductances.

µA

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

10.4

Modified MOSFET symbol showing the integral

ISM

Pulse Source Current (Body Diode)



—

—

41.6

reverse p-n junction rectifier.

VSD

Diode Forward Voltage

—

—

1.62

V

trr

Reverse Recovery Time

—

—

1200

ns

Tj = 25°C, IF = 10.4A, di/dt ≤ 100A/µs

QRR

Reverse Recovery Charge

—

—

16

µCVDD ≤ 30V „

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

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