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2N6845 Datasheet(PDF) 1 Page - International Rectifier

Part # 2N6845
Description  POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A)
PDF  6 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

2N6845 Datasheet(HTML) 1 Page - International Rectifier

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Product Summary
Part Number
BVDSS
RDS(on)
ID
JANTX2N6845
JANTXV2N6845
Features:
s
Avalanche Energy Rating
s
Dynamic dv/dt Rating
s
Simple Drive Requirements
s
Ease of Paralleling
s
Hermetically Sealed
P-CHANNEL
Provisional Data Sheet No. PD-9.552B
-100 Volt, 0.60
Ω
Ω
Ω
Ω
Ω HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
JANTX2N6845
JANTXV2N6845
[REF:MIL-PRF-19500/563]
[GENERIC:IRFF9120]
HEXFET® POWER MOSFET
Absolute Maximum Ratings
Parameter
JANTX2N6845, JANTXV2N6845
Units
ID @ VGS = -10V, TC = 25°C Continuous Drain Current
-4.0
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
-2.6
IDM
Pulsed Drain Current Œ
-16
PD @ TC = 25°C
Max. Power Dissipation
20
W
Linear Derating Factor
0.16
W/K 
VGS
Gate-to-Source Voltage
±20
V
dv/dt
Peak Diode Recovery dv/dt Ž
-5.0
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
Weight
0.98 (typical)
g
oC
A
-4.0A
0.60
Ω
-100V
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