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AN3361 Datasheet(PDF) 12 Page - STMicroelectronics |
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AN3361 Datasheet(HTML) 12 Page - STMicroelectronics |
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12 / 15 page ![]() Choosing the appropriate Schottky diode AN3361 12/15 Doc ID 018589 Rev 1 In the example, we have selected the STPS5H100BY where: PARM(1 µs, Tj = 25 °C) = 7200 W. The derating curve Figure 11 shows the equivalent avalanche power the STPS5H100BY is able to dissipate is 0.035 · PARM (1 µs, Tj = 25 °C) = 252 W Therefore in this example the STPS5H100BY meets the ISO 7637-2 requirements and ensures a good reverse battery protection. Figure 11. Normalized avalanche power derating versus pulse duration for STPS5H100BY Note: The derating curve for STPS5H100BY can be found as Figure 3 in the datasheet for this device. Table 6 indicates which Schottky diode can withstand Pulse 1 of ISO 7637-2 standard. Table 6 shows that only a few Schottky diodes can handle this constraint. 0.001 0.01 0.1 0.01 1 0.1 0.035 120 µs 10 100 1000 1 P(t ) P (1µs) ARM p ARM t (µs) p Table 6. Compliance of Schottky diodes with ISO 7637-2 Pulse 1 Pulse 1 surge voltage (V) Vs = -100 V STPS2H100UY Yes STPS5H100BY Yes STPS8H100GY Yes |
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