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NPT1007 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

Part # NPT1007
Description  200W RF Power Transistor
PDF  7 Pages
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

NPT1007 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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NPT1007
NDS-012 Rev. 3, April 2013
NPT1007
Page 1
FEATURES
• Optimized for narrowband and broadband
applications from from DC – 1200MHz
• 200W P3dB CW power at 900MHz in quadrature
combined or push-pull configuration
• 90W CW power from 500-1000MHz in application
design AD-014
• High efficiency from 14V to 28V
• 1.0 °C/W RTH with maximum TJ rating of 200°C
• Robust up to 10:1 VSWR mismatch at all angles
with no device degradation
• Subject to EAR99 export control
DC – 1200 MHz
14 – 28 Volt
GaN HEMT
RF Specifications (CW): VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, TA = 25°C, Measured in Nitronex Quadrature
Combined Test Fixture2.
Gallium Nitride 28V, 200W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Typical 2-Tone Performance: VDS = 28V, IDQ = 1400mA1, Frequency = 900MHz, Tone spacing = 1MHz, TA = 25°C
Measured in Nitronex Quadrature Combined Test Fixture2 .
Symbol
Parameter
Typ
Units
P3dB,PEP
Peak Envelope Power at 3dB Gain Compression
53.4
dBm
P1dB,PEP
Peak Envelope Power at 1dB Gain Compression
52.6
dBm
PIMD3
Peak Envelope Power at -35dBc IMD3
50.8
dBm
Symbol
Parameter
Min
Typ
Max
Units
P3dB
Average Output Power at 3dB Gain Compression
52.0
53.0
-
dBm
GSS
Small Signal Gain
17.3
18.3
-
dB
h
Drain Efficiency at 3dB Gain Compression21
57
63
-
%
VSWR
10:1 VSWR at all phase angles
No change in device performance
Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ.
Note 2: Includes ~ 0.2 dB quadrature combiner loss.
Note 1: 700mA per transistor. Each gate should be biased independently to set desired IDQ.
Note 2: Includes ~ 0.2 dB quadrature combiner loss.


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