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AN4213 Datasheet(PDF) 23 Page - STMicroelectronics

Part # AN4213
Description  Fluorescent lamps are increasingly driven by electronic
PDF  42 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4213 Datasheet(HTML) 23 Page - STMicroelectronics

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DocID023984 Rev 2
23/42
AN4213
DC/AC converter and lamp
The first parameter to take into account is the maximum voltage drop that we have to
guarantee when the high-side switch is in the on state. The maximum allowable voltage
drop (V
BOOT
) depends on the minimum gate drive voltage (for the high-side switch) to
maintain. If V
GSMIN
is the minimum gate-source voltage, the capacitor drop must be:
Equation 40
where:
V
DD
is supply voltage of the gate driver [V];
V
F
is the bootstrap diode forward-voltage drop [V].
The value of the bootstrap capacitor is calculated by:
Equation 41
Where, Q
TOTAL
is the total amount of the charge supplied by the capacitor. The total charge
supplied by the bootstrap capacitor is calculated using
Equation 42:
Equation 42
Where:
Q
GATE
is the total gate charge
I
LKCAP
is the bootstrap capacitor leakage current
I
LKGS
is the switch gate-source leakage current
I
QBS
is the bootstrap circuit quiescent current
I
LK
is the bootstrap circuit leakage current
I
LKDIODE
is the bootstrap diode leakage current
T
ON
is the high-side switch-on time
Q
LS
is the charge required by the internal level shifter, which is set to 3 nC for all HV
gate drivers.
The capacitor leakage current is important only if an electrolytic capacitor is used, otherwise
this can be neglected. Recommended values for the bootstrap capacitor are within the
range of 100 nF~570 nF, but the right value must be selected according to the application in
which the device is used. When the capacitor value is too large, the bootstrap charging time
slows and the low-side on-time might be not long enough to reach the bootstrap voltage. For
this project the selected value is 100 nF/400 V. The output drivers drive an external N-
channel Power MOSFET. The internal logic ensures a deadtime (typ 1.25 μs) to avoid cross-
conduction of the power devices. The selected power device is STL13N60M2.
GSMIN
F
DD
BOOT
V
V
V
V
=
Δ
BOOT
TOTAL
BOOT
V
Q
C
Δ
=
()
LS
ON
LKDIODE
LK
QBS
LKGS
LKCAP
GATE
TOTAL
Q
t
I
I
I
I
I
Q
Q
+
+
+
+
+
+
=



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