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AN4213 Datasheet(PDF) 23 Page - STMicroelectronics |
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AN4213 Datasheet(HTML) 23 Page - STMicroelectronics |
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23 / 42 page ![]() DocID023984 Rev 2 23/42 AN4213 DC/AC converter and lamp The first parameter to take into account is the maximum voltage drop that we have to guarantee when the high-side switch is in the on state. The maximum allowable voltage drop (V BOOT ) depends on the minimum gate drive voltage (for the high-side switch) to maintain. If V GSMIN is the minimum gate-source voltage, the capacitor drop must be: Equation 40 where: • V DD is supply voltage of the gate driver [V]; • V F is the bootstrap diode forward-voltage drop [V]. The value of the bootstrap capacitor is calculated by: Equation 41 Where, Q TOTAL is the total amount of the charge supplied by the capacitor. The total charge supplied by the bootstrap capacitor is calculated using Equation 42: Equation 42 Where: • Q GATE is the total gate charge • I LKCAP is the bootstrap capacitor leakage current • I LKGS is the switch gate-source leakage current • I QBS is the bootstrap circuit quiescent current • I LK is the bootstrap circuit leakage current • I LKDIODE is the bootstrap diode leakage current • T ON is the high-side switch-on time • Q LS is the charge required by the internal level shifter, which is set to 3 nC for all HV gate drivers. The capacitor leakage current is important only if an electrolytic capacitor is used, otherwise this can be neglected. Recommended values for the bootstrap capacitor are within the range of 100 nF~570 nF, but the right value must be selected according to the application in which the device is used. When the capacitor value is too large, the bootstrap charging time slows and the low-side on-time might be not long enough to reach the bootstrap voltage. For this project the selected value is 100 nF/400 V. The output drivers drive an external N- channel Power MOSFET. The internal logic ensures a deadtime (typ 1.25 μs) to avoid cross- conduction of the power devices. The selected power device is STL13N60M2. GSMIN F DD BOOT V V V V − − = Δ BOOT TOTAL BOOT V Q C Δ = () LS ON LKDIODE LK QBS LKGS LKCAP GATE TOTAL Q t I I I I I Q Q + ∗ + + + + + = |
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