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AN4406 Datasheet(PDF) 22 Page - STMicroelectronics

Part # AN4406
Description  new ST super-junction technology ideal for resonant topologies
PDF  27 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4406 Datasheet(HTML) 22 Page - STMicroelectronics

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Testing and comparing
AN4406
22/27
DocID025567 Rev 1
4.3.1
Purpose and description
This analysis tested and compared the electrical performance of the STP24N60M2 and
STP20N65M5 MOSFETs using the MDmesh™ M2 and MDmesh™ M5 technologies
respectively against well-known super-junction competitor devices A and B, when mounted
on a demo board (400 W LLC topology).
To perform the test, the devices were removed from the original position and soldered on
the back without a heat sink. All the measurements were performed at 25 °C ambient
temperature.
In order to obtain the waveforms of the main electrical parameters of the devices, small
wires loop were inserted on each pin.
Attention was focused on the electrical parameters of the MOSFETs, including voltage
across drain and source (VDS), current (ID) and voltage across gate to source (VGS).
The test sequence was with Vin =230 Vac and steady state at:
•
10% of the maximum load – IOUT(tot) fixed (0.371 A);
•
20% of the maximum load – IOUT(tot) fixed (0.742 A);
•
50% of the maximum load – IOUT(tot) fixed (1.855 A);
•
100% of the maximum load – IOUT(tot) fixed (3.71 A);
4.3.2
Main parameters
Device selection was based on electrical characteristics like V(BR)DSS, RDS(on) and package.
Table 4. ST super-junction technologies available on the market
Parameter
Test
conditions
STF13N60M2 STF15N65M5
Competitor
A
Competitor
B
Unit
(1)V
(BR)DSS
1.
Measured parameter
VGS =0 V,
ID =1 mA
640
713
700
635
V
(1)R
DS(on)
VGS =10 V,
ID =5.5 A
0.712
0.158
0.177
0.137
Ω
Vth
ID = 250 µA
2.9
4.1
3.1
3.7
V
Ciss
100 V / 100 V
/ 100 V / 25 V
1060
1434
1400
1600
pF
Coss
100 V / 100 V
/ 100 V / 25 V
55
38
85
61
pF
Crss
100 V / 100 V
/ 100 V / 25 V
2.2
3.7
-
8.2
pF
Qg
VDD =520 V,
VGS =0 V
29
36
63
27
nC
Rg
f = 1 MHz
7
3.5
8.5
2.5
Ω



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