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AN4406 Datasheet(PDF) 22 Page - STMicroelectronics |
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AN4406 Datasheet(HTML) 22 Page - STMicroelectronics |
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22 / 27 page ![]() Testing and comparing AN4406 22/27 DocID025567 Rev 1 4.3.1 Purpose and description This analysis tested and compared the electrical performance of the STP24N60M2 and STP20N65M5 MOSFETs using the MDmesh™ M2 and MDmesh™ M5 technologies respectively against well-known super-junction competitor devices A and B, when mounted on a demo board (400 W LLC topology). To perform the test, the devices were removed from the original position and soldered on the back without a heat sink. All the measurements were performed at 25 °C ambient temperature. In order to obtain the waveforms of the main electrical parameters of the devices, small wires loop were inserted on each pin. Attention was focused on the electrical parameters of the MOSFETs, including voltage across drain and source (VDS), current (ID) and voltage across gate to source (VGS). The test sequence was with Vin =230 Vac and steady state at: • 10% of the maximum load – IOUT(tot) fixed (0.371 A); • 20% of the maximum load – IOUT(tot) fixed (0.742 A); • 50% of the maximum load – IOUT(tot) fixed (1.855 A); • 100% of the maximum load – IOUT(tot) fixed (3.71 A); 4.3.2 Main parameters Device selection was based on electrical characteristics like V(BR)DSS, RDS(on) and package. Table 4. ST super-junction technologies available on the market Parameter Test conditions STF13N60M2 STF15N65M5 Competitor A Competitor B Unit (1)V (BR)DSS 1. Measured parameter VGS =0 V, ID =1 mA 640 713 700 635 V (1)R DS(on) VGS =10 V, ID =5.5 A 0.712 0.158 0.177 0.137 Ω Vth ID = 250 µA 2.9 4.1 3.1 3.7 V Ciss 100 V / 100 V / 100 V / 25 V 1060 1434 1400 1600 pF Coss 100 V / 100 V / 100 V / 25 V 55 38 85 61 pF Crss 100 V / 100 V / 100 V / 25 V 2.2 3.7 - 8.2 pF Qg VDD =520 V, VGS =0 V 29 36 63 27 nC Rg f = 1 MHz 7 3.5 8.5 2.5 Ω |
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