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AN2692 Datasheet(PDF) 8 Page - STMicroelectronics |
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AN2692 Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 29 page ![]() Introduction to ST10F269Zx 0.35 µm embedded Flash memory AN2692 8/29 Flash commands and ST10 pipeline effect Due to the ST10F269Zx pipeline effect, all erase and program commands must not be immediately followed by a JMPx, CALLx or RETx instruction. For any erase or program command, a NOP instruction must be inserted after sending the last command to the Flash memory Erase/Program Controller. When not implemented, and when the ST10F269Zx is in bootstrap mode with the code running from the XRAM or an external memory, the TestFlash may be selected instead of the user Flash memory (for details, please refer to ST10F269Zx errata sheet). Read Protection Status RP 4 Addr.(2) x2A54h x15A8h x2A54h Any odd word address (5) Read Protection Register until a new write cycle is initiated. Data xxA8h xx54h xx90h Read PR Block Temporary Unprotection BTU 4 Addr.(2) x2A54h x15A8h x2A54h X Data xxA8h xx54h xxC1h xxF0h Code Temporary Unprotection CTU 1 Addr.(2) MEM (7) Write cycles must be executed from Flash. Data FFFFh Code Temporary Protection CTP 1 Addr.(2) MEM (7) Write cycles must be executed from Flash. Data FFFBh 1. Mne = mnemonic, X = Don’t Care. WA = Write Address: address of memory location to be programmed. WD = Write Data: 16-bit data to be programmed. BA = Block address. 2. Address bit A14, A15 and above are don’t care for coded address inputs. 3. Optional, additional blocks addresses must be entered within a timeout delay (96 µs) after last write entry, timeout status can be verified through FSB.3 value. When full command is entered, read Data Polling or Toggle bit until Erase is completed or suspended. 4. Read data polling or toggle bit until erase completes. 5. Odd word address = 4n-2 where n = 0, 1, 2, 3..., e.g. 0002h, 0006h, etc. 6. WPR = Write protection register. To protect code, bit 15 of WPR must be ‘0’. To protect block N (N=0,1,...), bit N of WPR must be ‘0’. Bit that are already at ‘0’ in protection register must also be ‘0’ in WPR, else a writing error will occurs (it is not possible to write a ‘1’ in a bit already programmed at ‘0’). 7. MEM = any address inside the Flash memory space. Absolute addressing mode must be used (MOV MEM, Rn), and instruction must be executed from Flash memory space. Table 1. Commands for ST10 with 0.35 µm embedded Flash memory(1) (continued) Instruction Mne Cycle Address/ Data 1st cycle 2nd cycle 3rd cycle 4th cycle 5th cycle 6th cycle 7th cycle |
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