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AN2692 Datasheet(PDF) 23 Page - STMicroelectronics |
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AN2692 Datasheet(HTML) 23 Page - STMicroelectronics |
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23 / 29 page ![]() AN2692 Embedded application aspects 23/29 As a consequence: ● Block 0 (that starts at physical address: 00 0000h) should never be erased during field reprogramming. ● Block 0 should contain all the routines that make it possible to restart the reprogramming routines (if those routines are in another block, this block also should never be erased). Note: This restriction on block 0 does not apply if the ST10F269Zx Bootstrap Loader mode is used for field reprogramming (see Code protection and bootstrap loader on page 18 paragraph if code protection is used). Flash bock write protection It is recommended to use the Flash memory Set Block Protection command to protect the block(s) which contains all the needed software to restart the reprogramming routines. Any inadvertent Chip Erase command will not affect those protected blocks. Reset and other blocks Suggested method of handling: reset during erase and/or program should be detected externally. In such a case, the entire "erasing" or "erasing + programming" process should be restarted. Detection of reset during erasing or reprogramming should be done by external resources (hardware, protocol between ST10 and the programming station). 3.2.3 List of events and suggested handling methods Supply variations The ST10F269Zx supply must remain within the supply voltage range specified in the published datasheet during any erase or program command. Detection method Specific hardware should be added to monitor the supply, and reset the device when the ST10F269Zx supply is going out of the functional specification (see datasheet). Suggested handling method Restart the whole reprogramming sequence at module level (i.e.: erasing + programing). Note: As for any other parameter, the ST10F269Zx supply should stay within the maximum absolute ratings defined in the published datasheet. Temperature out of specification Temperature during erase, program and operation has an influence on the reliability of ST10F269Zx devices. The embedded Flash memory may be programmed and erased only while the junction temperature is within the range specified in the ST published datasheet (see ST10F269Zx datasheet). Failure to keep the device within the temperature ranges specified in the product datasheet could result in degraded reliability (lower number of erase cycles, lower data retention). |
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