KTC4527 datasheet(1/3 Pages) KEC

Part #	KTC4527

Description	TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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1 / 3 page

2001. 4. 9

1/3

SEMICONDUCTOR

TECHNICAL DATA

KTC4527

TRIPLE DIFFUSED NPN TRANSISTOR

Revision No : 1

HIGH VOLTAGE AND HIGH RELIABILITY

HIGH SPEED SWITCHING, WIDE SOA

MAXIMUM RATING (Ta=25 )

DIM MILLIMETERS

1. BASE

2. COLLECTOR (HEAT SINK)

3. EMITTER

TO-220AB

10.30 MAX

15.30 MAX

0.80

Φ3.60 0.20

3.00

6.70 MAX

13.60 0.50

5.60 MAX

0.50

1.50 MAX

2.54

4.70 MAX

2.60

A

B

C

D

E

F

G

H

J

K

L

M

N

O

P

A

MM

123

L

C

K

J

P

D

1.37 MAX

1.50 MAX

R

S

C

T

Q1.50

R

9.50 0.20

S

8.00 0.20

T

2.90 MAX

+_

ELECTRICAL CHARACTERISTICS (Ta=25 )

Note : hFE (1) Classification R:15 30, O:20 40

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=800V, IE=0

-

10

A

Emitter Cut-off Current

IEBO

VEB=5V, IC=0

-

10

A

Collector-Emitter Sustaning Voltage

VCEX(SUS)

IC=1.5A, IB1=-IB2=0.3A

L=2mH, Clamped

800

-

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC=1.5A, IB=0.3A

-

2

V

Base-Emitter Saturation Voltage

VBE(sat)

IC=1.5A, IB=0.3A

-

1.5

V

DC Current Gain

hFE (1) (Note) VCE=5V, IC=0.2A

15

-

40

hFE (2)

VCE=5V, IC=1A

8

-

Collector-Base Breakdown Voltage

BVCBO

IC=1mA, IE=0

1100

-

V

Collector-Emitter Breakdown Voltage

BVCEO

IC=5mA, RBE=

800

-

V

Emitter-Base Breakdown Voltage

BVEBO

IE=1mA, IC=0

7

-

V

Collector Output Capacitance

Cob

VCB=10V, f=1MHz, IE=0

-

60

-

pF

Transition Frequency

fT

VCE=10V, IC=0.2A

-

15

-

MHz

Switching

Time

Turn On Time

ton

IB1

200Ω

B1

I

CC

V

=400V

IB2

20

µS

I

=0.4A , I

=-0.8A

1%

B1

B2

OUTPUT

DUTY CYCLE

INPUT

<

=

-

0.5

S

Storage Time

tstg

-

3

Fall Time

tf

-

0.3

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

1100

V

Collector-Emitter Voltage

VCEO

800

V

Emitter-Base Voltage

VEBO

7

V

Collector Current

DC

IC

3

A

Pulse

ICP

10

Base Current

IB

1.5

A

Collector Power Dissipation

(Tc=25 )

PC

50

W

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 150

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