KTK161 datasheet(1/3 Pages) KEC

Part #	KTK161

Description	N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (HIGH FREQUENCY, VHF BAND AMPLIFIER)

PDF	3 Pages

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Manufacturer	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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1 / 3 page

1995. 1. 24

1/3

SEMICONDUCTOR

TECHNICAL DATA

KTK161

N CHANNEL JUNCTION FIELD

EFFECT TRANSISTOR

Revision No : 0

HIGH FREQUENCY APPLICATION.

VHF BAND AMPLIFIER APPLICATION.

FEATURES

Low Noise Figure.

: NF=2.5dB(Typ.) (f=100MHz).

High Forward Transfer Admittance.

:|yfs|= 9mS(Typ.).

Extremely Low Reverse Transfer Capacitance.

: Crss=0.1pF(Typ.)

MAXIMUM RATINGS (Ta=25 )

1

2

3

TO-92M

DIM MILLIMETERS

A

B

C

D

E

F

G

H

J

K

1. DRAIN

2. SOURCE

3. GATE

3.20 MAX

4.30 MAX

0.55 MAX

2.40 0.15

1.27

2.30

14.00 0.50

0.60 MAX

1.05

1.45

25

0.55 MAX

L

M

N

EE

L

N

M

C

H

0.80

O

0.75

O

B

+_

ELECTRICAL CHARACTERISTICS (Ta=25 )

Note : IDSS Classification O:1.0 3.0,

Y:2.5 6.0,

GR:5.0 10.0,

BL:9.0 15.0

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Gate Leakage Current

IGSS

VGS=-0.5V, VDS=0

-

-10

nA

Gate-Drain Breakdown Voltage

V(BR)GDO

IG=-100 A

-18

-

V

Drain Current

IDSS (Note)

VDS=10V, VGS=0V

1.0

-

15.0

mA

Gate-Source Cut-off Voltage

VGS(OFF)

VDS=10V, ID=1 A

-0.4

-

-4.0

V

Foward Transfer Admittance

|yfs|

VDS=10V, VGS=0, f=1kHz

-

9.0

-

mS

Reverse Transfer Capacitance

Crss

VGD=-10V, f=1MHz

-

0.10

0.15

pF

Power Gain

Gps

VDD=10V, f=100MHz (Fig.)

-

18

-

dB

Noise Figure

NF

VDD=10V, f=100MHz (Fig.)

-

2.5

3.5

dB

CHARACTERISTIC

SYMBOL

RATING

UNIT

Gate-Drain Voltage

VGDO

-18

V

Gate-Current

IG

10

mA

Drain Power Dissipation

PD

400

mW

Junction Temperature

Tj

150

Storage Temperature Range

Tstg

-55 150

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