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AN3422 Datasheet(PDF) 32 Page - STMicroelectronics |
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AN3422 Datasheet(HTML) 32 Page - STMicroelectronics |
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32 / 52 page ![]() Peripheral migration AN3422 32/52 Doc ID 018976 Rev 2 4.9 FLASH The table below presents the difference between the FLASH interface of STM32F1 series and STM32L1 series, which can be grouped as follows: ● New interface, new technology ● New architecture ● New read protection mechanism, 3 read protection levels with JTAG fuse Consequently the L1 Flash programming procedures and registers are different from the F1 series, and any code written for the Flash interface in the F1 series needs to be rewritten to run on L1 series. For more information on programming, erasing and protection of the L1 Flash memory, please refer to the STM32L1xx Flash programming manual (PM0062). Table 12. FLASH differences between STM32F1 series and STM32L1 series Feature STM32F1 series STM32L1 series Wait State up to 2 up to 1 (depending on the supply voltage) Main/Program memory Start Address 0x0800 0000 0x0800 0000 End Address up to 0x080F FFFF up to 0x0805 FFFF Granularity Page size = 2 Kbytes except for Low and Medium density page size = 1 Kbytes Sector size = 4 Kbytes: 16 Pages of 256 bytes EEPROM memory Start Address Available through SW emulation (1) 0x0808 0000 End Address 0x0808 2FFF System memory Start Address 0x1FFF F000 0x1FF0 0000 End Address 0x1FFF F7FF 0x1FF0 1FFF Option Bytes Start Address 0x1FFF F800 0x1FF8 0000/0x1FF8 0080 End Address 0x1FFF F80F 0x1FF8001F/0x1FF8 009F OTP Start Address NA NA End Address Flash interface Start address 0x4002 2000 0x4002 3C00 Programming procedure Same for all product lines Different from F1 series Erase granularity Page (1 or 2 Kbytes) Program memory: Page (256 bytes) DATA EEPROM memory: byte/ halfword/ word / double word |
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