STS20N3LLH6 datasheet(1/13 Pages) STMICROELECTRONICS

Part #	STS20N3LLH6

Description	Low gate drive power losses

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 13 page

March 2010

Doc ID 15528 Rev 2

1/13

13

STS20N3LLH6

N-channel 30 V, 0.004

Ω, 20 A, SO-8

STripFET™ VI DeepGATE™ Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ High avalanche ruggedness

■ Low gate drive power losses

■ Very low switching gate charge

Application

■ Switching applications

Description

This product utilizes the 6th generation of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure.The resulting Power

MOSFET exhibits the lowest RDS(on) in all

packages.

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

max

ID

STS20N3LLH6

30 V

0.0047

Ω

20 A

SO-8

Table 1.

Device summary

Order code

Marking

Package

Packaging

STS20N3LLH6

20G3L

SO-8

Tape and reel

www.st.com

Obsolete

Product(s)

- Obsolete

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