STS20N3LLH6 datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STS20N3LLH6

4/13

Doc ID 15528 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 10 A

VGS= 4.5 V, ID= 10 A

0.004

0.0059

0.0047

0.0075

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

1690

290

176

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 20 A

VGS =4.5 V

Figure 19

Gate Input Resistance

f=1 MHz Gate DC Bias = 0

Test signal level = 20 mV

open drain

-1.7

Ω

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