RU6H2K datasheet(2/8 Pages) RUICHIPS

2 / 8 page

RU6H2K

Min.

Typ.

Max.

BVDSS

Drain-Source Breakdown Voltage

600

TJ=125°C

VGS(th)

Gate Threshold Voltage

IGSS

Gate Leakage Current

±100

RDS(ON)

④

Drain-Source On-state Resistance

4000

5000

mΩ

VSD

④

Diode Forward Voltage

1.2

trr

Reverse Recovery Time

190

Qrr

Reverse Recovery Charge

0.77

µC

Gate Resistance

Ciss

Input Capacitance

280

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

Turn-off Fall Time

Total Gate Charge

Qgs

Gate-Source Charge

1.7

Qgd

Gate-Drain Charge

4.5

Notes:

Ruichips Semiconductor Co., Ltd

Rev. A– MAR., 2013

www.ruichips.com

VDS=VGS, IDS=250µA

Static Characteristics

Symbol

Parameter

Test Condition

RU6H2K

Unit

VGS=0V, IDS=250µA

IDSS

Zero Gate Voltage Drain Current

VDS=600V, VGS=0V

µA

Electrical Characteristics (T

C=25°C Unless Otherwise Noted)

VDD=300V, RL=150Ω,

IDS=2A, VGEN=10V,

RG=25Ω

VDS=480V, VGS=10V,

IDS=2A

①Pulse width limited by safe operating area.

②Calculated continuous current based on maximum allowable junction temperature.

③Limited by T

Jmax, IAS =2.6A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C.

④Pulse test;Pulse width≤300µs, duty cycle≤2%.

⑤Guaranteed by design, not subject to production testing.

Gate Charge Characteristics

⑤

ISD=2A, VGS=0V

ISD=2A, dlSD/dt=100A/µs

VGS=0V,VDS=0V,F=1MHz

VGS=0V,

VDS=300V,

Frequency=1.0MHz

Dynamic Characteristics

⑤

VGS=±30V, VDS=0V

VGS=10V, IDS=1A

Diode Characteristics

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