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LTC3448 Datasheet(PDF) 12 Page - Linear Technology |
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LTC3448 Datasheet(HTML) 12 Page - Linear Technology |
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12 / 20 page ![]() 12 LTC3448 3448f APPLICATIO S I FOR ATIO top and bottom MOSFET RDS(ON) and the duty cycle (DC) as follows: RSW = (RDS(ON)TOP)(DC) + (RDS(ON)BOT)(1 – DC) The RDS(ON) for both the top and bottom MOSFETs can be obtained from the Typical Performance Characteris- tics curves. Thus, to obtain I2R losses, simply add RSW to RL and multiply the result by the square of the average output current. 3. At load currents below the selected threshold the LTC3448 will switch into low ripple LDO mode if en- abled. In this case the losses are due to the DC bias currents as given in the electrical characteristics and I2R losses due to the (VIN – VOUT) voltage drop across the internal pass transistor. Other losses when in switching operation, including CIN and COUT ESR dissipative losses and inductor core losses, generally account for less than 2% total additional loss. Thermal Considerations The LTC3448 requires the package backplane metal (GND pin) to be well soldered to the PC board. This gives the DFN and MSOP packages exceptional thermal properties, mak- ing it difficult in normal operation to exceed the maximum junction temperature of the part. In most applications the LTC3448 does not dissipate much heat due to its high efficiency. In applications where the LTC3448 is running at high ambient temperature with low supply voltage and high duty cycles, such as in dropout, the heat dissipated may exceed the maximum junction temperature of the part if it is not well thermally grounded. If the junction temperature reaches approximately 150 °C,bothpowerswitcheswillbe turned off and the SW node will become high impedance. To avoid the LTC3448 from exceeding the maximum junction temperature, the user will need to do some thermal analysis. The goal of the thermal analysis is to determine whether the power dissipated exceeds the maximum junction temperature of the part. The tempera- ture rise is given by: TR = PDθJA where PD is the power dissipated by the regulator and θJA is the thermal resistance from the junction of the die to the ambient temperature. The junction temperature, TJ, is given by: TJ = TA + TR where TA is the ambient temperature. As an example, consider the LTC3448 in dropout at an input voltage of 2.7V, a load current of 600mA and an ambient temperature of 70 °C. From the typical perfor- mance graph of switch resistance, the RDS(ON) of the P-channel switch at 70 °C is approximately 0.52Ω. There- fore, power dissipated by the part is: PD = ILOAD2 • RDS(ON) = 187.2mW For the 3mm × 3mm DFN package, the θJA is 43°C/W. Thus, the junction temperature of the regulator is: TJ = 85°C + (0.1872)(43) = 93°C which is well below the maximum junction temperature of 125 °C. Note that at higher supply voltages, the junction tempera- ture is lower due to reduced switch resistance RDS(ON). Checking Transient Response The regulator loop response can be checked by looking at the load transient response. Switching regulators take several cycles to respond to a step in load current. When a load step occurs, VOUT immediately shifts by an amount equal to ( ∆ILOAD • ESR), where ESR is the effective series resistance of COUT. ∆ILOAD also begins to charge or dis- charge COUT, which generates a feedback error signal. The regulator loop then acts to return VOUT to its steady-state value. During this recovery time VOUT can be monitored for overshoot or ringing that would indicate a stability prob- lem. For a detailed explanation of switching control loop theory, see Application Note 76. A second, more severe transient is caused by switching in loads with large (>1 µF) supply bypass capacitors. The discharged bypass capacitors are effectively put in parallel |
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