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LTC1159CS Datasheet(PDF) 6 Page - Linear Technology |
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LTC1159CS Datasheet(HTML) 6 Page - Linear Technology |
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6 / 20 page ![]() 6 LTC1159/LTC1159-3.3/LTC1159-5 When the voltage on CT has discharged past VTH1, com- parator T trips, setting the flip-flop. This causes the N-gate output to go low (turning off the N-channel MOSFET) and the P-gate output to also go low (turning the P-channel MOSFET back on). The cycle then repeats. As the load current increases, the output voltage decreases slightly. This causes the output of the gain stage to increase the current comparator threshold, thus tracking the load current. The sequence of events for Burst Mode operation is very similar to continuous operation with the cycle interrupted by the voltage comparator. When the output voltage is at or above the desired regulated value, the P-channel MOSFET is held off by comparator V and the timing capacitor continues to discharge below VTH1. When the timing capacitor discharges past VTH2, voltage comparator S trips, causing the internal SLEEP line to go low and the N-channel MOSFET to turn off. The circuit now enters sleep mode with both power MOSFETs turned off. In sleep mode, much of the cir- cuitry is turned off, dropping the supply current from several milliamps (with the MOSFETs switching) to 300 µA. When the output capacitor has discharged by the amount of hysteresis in comparator V, the P-channel MOSFET is again turned on and this process repeats. To avoid the operation of the current loop interfering with Burst Mode operation, a built-in offset is incorporated in the gain stage. To prevent both the external MOSFETs from being turned on at the same time, feedback is incorporated to sense the state of the driver output pins. Before the N-gate output can go high, the P-drive output must also be high. Likewise, the P-drive output is prevented from going low when the N- gate output is high. OPERATIO (Refer to Functional Diagram) Internal divider broken at VFB for adjustable versions. FU CTIO AL DIAGRA – + N-GATE P-DRIVE VCC 550k P-GATE P-GND 550k CAP LOW DROP SWITCH VCC EXTVCC SHDN2 VIN SENSE+ V R S Q VTH1 25mV TO 150mV 13k G REFERENCE 1.25V S-GND ITH C VOS SENSE– LTC1159 • FD SHDN1 T VTH2 S SLEEP CT VFB OFF-TIME CONTROL SENSE– LOW DROPOUT 4.5V REGULATOR 100k |
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