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TSM2N60ECPROG Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Part # TSM2N60ECPROG
Description  N-Channel Power MOSFET
PDF  7 Pages
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Manufacturer  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM2N60ECPROG Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM2N60E
600V, 2A, 4
Ω
N-Channel Power MOSFET
2/7
Version: A14
Electrical Specifications (T
C = 25℃ unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
(Note 5)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
BVDSS
600
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 1A
RDS(ON)
--
3.2
4
Ω
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
3
--
5
V
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
IDSS
--
--
1
µA
VDS = 480V, TJ = 125℃
--
--
10
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
µA
Forward Transconductance
VDS = 30V, ID = 1A
gfs
--
3
--
S
Dynamic
(Note 6)
Total Gate Charge
VDS = 480V, ID = 2A,
VGS = 10V
Qg
--
9.5
--
nC
Gate-Source Charge
Qgs
--
2.1
--
Gate-Drain Charge
Qgd
--
3.9
--
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
Ciss
--
362
--
pF
Output Capacitance
Coss
--
40
--
Reverse Transfer Capacitance
Crss
--
7.2
--
Switching
(Note 7)
Turn-On Delay Time
VDD = 300V , VGS = 10V ,
RG = 25W, ID = 2A
td(on)
--
21
--
ns
Turn-On Rise Time
tr
--
22
--
Turn-Off Delay Time
td(off)
--
41
--
Turn-Off Fall Time
tf
--
21
--
Source-Drain Diode Ratings and Characteristic
(Note 5)
Maximum Continuous Drain-Source Diode Forward Current
IS
--
--
2
A
Maximum Pulse Drain-Source Diode Forward Current
ISM
--
--
8
A
Diode-Source Forward Voltage
VGS = 0V, IS = 2A
VSD
--
--
1.5
V
Reverse Recovery Time
VGS = 0V, IS = 2A
dIF/dt = 100A/µs
trr
--
238
--
ns
Reverse Recovery Charge
Qrr
--
0.8
--
nC
Notes:
1.
Current limited by package
2.
Pulse width limited by the maximum junction temperature
3.
VDD = 50V, L= 30.5mH, IAS = 2A, RG = 25W, Starting TJ = 25℃
4.
ISD ≤ 2A, di/dt ≤ 200A/µs, VDD ≤ BVDS, Starting TJ = 25℃
5.
Pulse test: PW
≤ 300µs, duty cycle ≤ 2%
6.
For DESIGN AID ONLY, not subject to production testing.
7.
Switching time is essentially independent of operating temperature.



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