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TSM2N60ECPROG Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM2N60ECPROG Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 7 page  TSM2N60E 600V, 2A, 4 Ω N-Channel Power MOSFET 1/7 Version: A14 TO-251 (IPAK) TO-252 (DPAK) Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on)(max) 4 Ω Qg (typ) 9.5 nC Features ● 100% Avalanche Tested ● G-S ESD Protection Diode Embedded Ordering Information Part No. Package Packing TSM2N60ECH C5G TO-251 75pcs / Tube TSM2N60ECP ROG TO-252 2.5kpcs / 13 ” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (T C = 25℃ unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current (Note 1) Tc = 25 ℃ ID 2 A Tc = 100 ℃ 1.43 A Pulsed Drain Current (Note 2) IDM 8 A Repetitive Avalanche Current (Note 1) IAR 2 A Repetitive Avalanche Energy (Note 1) EAR 5.2 A Single Pulse Avalanche Energy (Note 3) EAS 66 mJ Total Power Dissipation TC = 25℃ PD 52.1 W Derate above TC = 25℃ 0.416 W/ ℃ Peak Diode Recovery dV/dt (Note 4) dV/dt 4.5 V/ns Operating Junction Temperature TJ -55 to +150 ℃ Storage Temperature Range TSTG -55 to +150 ℃ Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case RӨJC 2.4 ℃/W Thermal Resistance - Junction to Ambient RӨJA 110 ℃/W Block Diagram N-Channel MOSFET with ESD Protection Pin Definition: 1. Gate 2. Drain 3. Source |
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