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TSM126 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM126 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 7 page  TSM126 N-Channel Depletion-Mode MOSFET 2/7 Version: A14 Electrical Specifications (Tj = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static a Drain-Source Breakdown Voltage VGS = -5V, ID = 250µA BVDSS 600 -- -- V Gate Threshold Voltage VDS = 3V, ID = 8µA VGS(TH) -2.7 -1.8 -1.0 V Drain-Source cutoff current VDS = 600V, VGS = -5V, Ta = 25℃ IDS(OFF) -- -- 0.1 µA Drain-Source cutoff current VDS = 480V, VGS = -5V, Ta = 125℃ 10 µA Gate-Source Leakage Current VGS = ±20V, VDS = 0V IGSS -- -- ±10 µA On-state Drain Current VDS = 25V, VGS = 0V IDSS 12 -- -- mA Drain-Source On-State Resistance VGS = 0V, ID = 3mA RDS(ON) -- 350 700 Ω VGS = 10V, ID = 16mA 400 800 Ω Forward Transconductance | VDS | >2 ID*RDS(ON)max, ID = 0.01A gfs 0.008 0.017 -- S Dynamic Input Capacitance VDS = 25V, VGS = -5V, f = 1.0MHz Ciss -- 51.42 -- pF Output Capacitance Coss -- 4.48 -- Reverse Transfer Capacitance Crss -- 1.12 -- Total Gate Charge VDS = 400V, ID = 0.01A, VGS = -5V to 5V Qg -- 1.18 -- nC Gate-Source Charge Qgs -- 0.49 -- Gate-Drain Charge Qgd -- 0.365 -- Switching Turn-On Delay Time VDD = 300V, ID = 0.01A, VGS = -5V to 7V, RG = 6Ω td(on) -- 10.01 -- ns Turn-On Rise Time tr -- 55.7 -- Turn-Off Delay Time td(off) -- 57.2 -- Turn-Off Fall Time tf -- 135.5 -- Source-Drain Diode Diode forward Current Continuous IS -- -- 0.025 A Diode Pulse Current ISM -- -- 0.100 A Diode Forward Voltage ISD = 16mA, VGS = -5V VSD -- -- 1.2 V Reverse Recovery Time IF=0.01A, VGS=-10V dIF/dt=100A/µs, VR=30V trr -- 243.1 -- ns Reverse Recovery Charge Qrr -- 639 -- nC Notes: a. pulse test: PW ≤380µs, duty cycle ≤2% |
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