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TSM126 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM126 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 7 page ![]() TSM126 N-Channel Depletion-Mode MOSFET 1/7 Version: A14 SOT-23 PRODUCT SUMMARY VDS (V) RDS(on)(Ω)(max) ID (A) 600 700 @ VGS = 0V 0.03 Features ● Depletion Mode ● Low Gate Charge Application ● Converters ● Telecom Ordering Information Part No. Package Packing TSM126CX RFG SOT-23 3kpcs / 7” Reel Note: “G” denotes Halogen Free Product. Absolute Maximum Ratings (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±20 V Continuous Drain Current Tc=25℃ ID 0.030 A Continuous Drain Current Tc=70℃ 0.024 A Pulsed Drain Current a IDM 0.120 A Maximum Power Dissipation PD 0.5 W Soldering Temperature b TL 300 oC Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction to Ambient RӨJA 250 oC/W Notes: a. Pulse width limited by the Maximum junction temperature b. Distance of 1.6mm from case for 10 seconds. Block Diagram N-Channel MOSFET Pin Definition: 1. Gate 2. Source 3. Drain |
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