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SDF02N20 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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SDF02N20 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 11 page ![]() S mHop Microelectronics C orp. a FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. N-Channel Enhancement Mode Field Effect Transistor www.samhop.com.tw Sep,30,2013 1 Details are subject to change without notice. S G D Ver 1.0 G D S SDF SERIES TO-220F ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) PRODUCT SUMMARY VDSS ID RDS(ON) ( Ω) Typ 2A 200V 3.0 @ VGS=10V Symbol VDS VGS IDM W A PD °C 75 -55 to 175 ID Units Parameter 200 2 5.9 V V ±30 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS SDP02N20 Drain Current-Continuous -Pulsed a A Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ, TSTG 62.5 °C/W Thermal Resistance, Junction-to-Ambient R JA TC=25°C 2 5.9 ±30 SDF02N20 TC=100°C A 1.4 1.4 37.5 W TC=100°C 2 °C/W Thermal Resistance, Junction-to-Case R JC EAS Single Pulse Avalanche Energy c mJ 81 G D S SDP SERIES TO-220 25 12.5 a 62.5 6 SDP02N20 SDF02N20 Green Product |
Similar Part No. - SDF02N20 |
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Similar Description - SDF02N20 |
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