STBP438S datasheet(3/8 Pages) SAMHOP

Part #	STBP438S

Description	Super high dense cell design for extremely low RDS(ON)

PDF	8 Pages

Scroll/Zoom	100%

Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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3 / 8 page

T j( C )

STB/P438S

www.samhop.com.tw

Feb,05,2009

VDS, Drain-to-Source Voltage(V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage(V)

Figure 2. Transfer Characteristics

ID, Drain Current (A)

Figure 3. On-Resistance vs. Drain Current

and Gate Voltage

Tj, Junction Temperature ( C )

Figure 4. On-Resistance Variation with

Drain Current and Temperature

Tj, Junction Temperature ( C )

Figure 5. Gate Threshold Variation

with Temperature

Tj, Junction Temperature ( C )

Figure 6. Breakdown Voltage Variation

with Temperature

0.4

0.0

0.2

1.4

1.2

1.0

0.8

0.6

125 150

100

-25

-50

100

0.5

1.0

1.5

2.0

2.5

3.0

VGS =3V

VGS =3.5V

VGS =10V

VGS =4V

0.7

4.2

3.5

2.8

2.1

1.4

T j=125 C

25 C

-55 C

100

V GS =4.5V

V GS =10V

2.0

1.8

1.6

1.4

1.2

1.0

100

125

150

V G S =4.5V

ID=12A

V G S =10V

ID=20A

V DS =V GS

ID=250uA

1.15

1.10

1.05

1.00

0.95

0.90

0.85

125 150

100

-25

-50

ID=250uA

Ver1.0

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