STBP4410 datasheet(1/10 Pages) SAMHOP

Part #	STBP4410

Description	Super high dense cell design for extremely low RDS(ON).

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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1 / 10 page

S mHop Microelectronics C orp.

a

STB4410

STP4410

Symbol

VDS

VGS

IDM

EAS

2

62.5

W

A

PD

°C

75

-55 to 175

ID

Units

Parameter

100

75

390

°C/W

V

±20

TC=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

°C/W

576

mJ

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Typ

100V

75A

7.0 @ VGS=10V

FEATURES

Super high dense cell design for extremely low RDS(ON).

High power and current handling capability.

TO-220 & TO-263 package.

STB S ER IE S

TO-263(DD-P AK )

G

S

D

STP S ER IE S

TO-220

S

D

G

S

G

D

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

Limit

Drain Current-Continuous

c

TC=25°C

-Pulsed

ac

A

Avalanche Energy

d

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

R JC

R JA

www.samhop.com.tw

Dec,26,2014

1

Details are subject to change without notice.

A

63

TC=70°C

52.5

W

Green

Product

Ver 1.0

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