STS126 datasheet(1/7 Pages) SAMHOP

Part #	STS126

Description	Super high dense cell design for low RDS(ON).

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

Logo

1 / 7 page

S mHop Microelectronics C orp.

a

STS126

Symbol

VDS

VGS

IDM

A

ID

Units

Parameter

100

V

±20

Gate-Source Voltage

Drain-Source Voltage

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

100V

1.4A

312

@

VGS=10V

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

Surface Mount Package.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Limit

Drain Current-Continuous

-Pulsed

b

A

Ver 2.0

www.samhop.com.tw

May,31,2012

1

Details are subject to change without notice.

W

PD

°C

-55 to 150

TA=25°C

Maximum Power Dissipation

Operating Junction and Storage

Temperature Range

TJ, TSTG

TA=70°C

A

TA=70°C

W

a

1.4

5.3

1.25

Gre

rr

P

Pr

P

P o

rr

1.1

0.8

TA=25°C

THERMAL CHARACTERISTICS

100

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

a

G

D

S

SOT -23

G

D

S

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STS126 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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