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STS126 Datasheet(PDF) 2 Page - SamHop Microelectronics Corp.

Part # STS126
Description  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS126 Datasheet(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
Symbol
Min
Typ
Max
Units
BVDSS
100
V
1
IGSS
±100
nA
VGS(th)
V
250
gFS
S
CISS
275
pF
COSS
27
pF
CRSS
20
pF
Qg
8
nC
10.5
16
2.8
tD(ON)
4.5
ns
tr
ns
tD(OFF)
ns
tf
ns
VDS=25V,VGS=0V
SWITCHING CHARACTERISTICS
VDD=50V
ID=0.7A
VGS=10V
RGEN=6ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=0.7A
VDS=5V,ID=0.7A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
IDSS
uA
Gate Threshold Voltage
VDS=VGS ,ID=250uA
VDS=80V , VGS=0V
VGS=±20V,VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
312
c
f=1.0MHz
c
STS126
Ver 2.0
www.samhop.com.tw
May,31,2012
2
nC
Qgs
nC
Qgd
0.96
1.4
Gate-Drain Charge
Gate-Source Charge
VDS=50V,ID=0.7A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VDS=50V,ID=0.7A,VGS=10V
VSD
Diode Forward Voltage
VGS=0V,IS=0.7A
0.78
1.2
V
Notes
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
_
_
_
1.0
1.6
2.5
1.8



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