STS3620 datasheet(1/8 Pages) SAMHOP

Part #	STS3620

Description	Super high dense cell design for low RDS(ON).

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Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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S mHop Microelectronics C orp.

a

FEATURES

Super high dense cell design for low RDS(ON).

Rugged and reliable.

Suface Mount Package.

Dual N-Channel Enhancement Mode Field Effect Transistor

www.samhop.com.tw

Jul,30,2013

1

Details are subject to change without notice.

STS3620

Ver 2.0

Green

Product

Symbol

VDS

VGS

IDM

W

A

PD

°C

1.25

-55 to 150

ID

Units

Parameter

30

2.6

10

V

±12

TA=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)

Drain Current-Continuous

a

-Pulsed

b

A

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

100

Thermal Resistance, Junction-to-Ambient

R JA

a

TA=25°C

Limit

TA=70°C

A

2.1

0.8

W

TA=70°C

°C/W

PRODUCT SUMMARY

VDSS

ID

RDS(ON) (m

Ω) Max

30V

2.6A

100 @ VGS=4.5V

86 @ VGS=10V

128 @ VGS=2.5V

ESD Protected.

S 1

S 2

G 1

D1

G 2

D2

TSOT 26

Top View

S1

D1/D2

S2

G1

D1/D2

G2

1

2

3

6

5

4

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