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STS8216 Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

Part # STS8216
Description  Super high dense cell design for low RDS(ON).
PDF  7 Pages
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Manufacturer  SAMHOP [SamHop Microelectronics Corp.]
Direct Link  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS8216 Datasheet(HTML) 1 Page - SamHop Microelectronics Corp.

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background image
S mHop Microelectronics C orp.
a
STS8216
Symbol
VDS
VGS
IDM
100
W
A
PD
°C
1.25
-55 to 150
ID
Units
Parameter
20
6
24
°C/W
V
V
±10
TA=25°C
Gate-Source Voltage
Drain-Source Voltage
THERMAL CHARACTERISTICS
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (m
Ω) Max
20V
6A
27 @ VGS=2.5V
20 @ VGS=4.0V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Limit
Drain Current-Continuous
a
-Pulsed
b
A
Maximum Power Dissipation
a
Operating Junction and Storage
Temperature Range
TJ, TSTG
Thermal Resistance, Junction-to-Ambient
R JA
Ver 1.0
www.samhop.com.tw
Sep,11,2009
1
Details are subject to change without notice.
a
TA=25°C
ESD Protected.
TA=70°C
4.8
A
TA=70°C
0.8
W
Dual N-Channel Enhancement Mode Field Effect Transistor
Green
Product
SOT 26
Top View
S1
D1/D2
S2
G1
D1/D2
G2
1
2
3
6
5
4
G 1
D1
S 1
G 2
D2
S 2


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