(CONTINUED ON REVERSE SIDE)

R0

2N6530

2N6531

2N6532

2N6533

NPN POWER TRANSISTOR

TO-220 CASE

DATA SHEET

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power

applications requiring extremely high gain.

MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

2N6530

2N6531

2N6532

2N6533

UNITS

Collector-Base Voltage

VCBO

80

100

100

120

V

Collector-Emitter Voltage

VCER

80

100

100

120

V

Collector-Emitter Voltage

VCEV

80

100

100

120

V

Collector-Emitter Voltage

VCEO

80

100

100

120

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

8.0

A

Peak Collector Current

ICM

15

A

Power Dissipation

PD

65

W

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

1.92

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

2N6530

2N6531

2N6532

2N6533

SYMBOL

TEST CONDITIONS

MIN MAX

MIN MAX

MIN MAX

MIN MAX

UNITS

ICEO

VCE=Rated VCEO

1.0

1.0

1.0

1.0

mA

ICEV

VCE=Rated VCEV,

0.5

0.5

0.5

0.5

mA

VEB=1.5V

ICEV

VCE=Rated VCEV,

5.0

5.0

5.0

5.0

mA

VEB=5.0V, TC=125°C

IEBO

VEB=5.0V

5.0

5.0

5.0

5.0

mA

BVCER

IC=200mA, RBE=100Ω

80

100

100

120

V

BVCEO

IC=200mA

80

100

100

120

V

BVCEV

IC=200mA, VEB=1.5V

80

100

100

120

V

VCE(SAT)

IC=3.0A, IB=6.0mA

3.0

2.0

V

VCE(SAT)

IC=5.0A, IB=10mA

2.0

2.0

V

VCE(SAT)

IC=8.0A, IB=80mA

3.0

3.0

3.0

3.0

V

VBE(ON)

VCE=3.0V, IC=3.0A

2.8

2.8

V

VBE(ON)

VCE=3.0V, IC=5.0A

2.8

2.8

V

VBE(ON)

VCE=3.0V, IC=8.0A

4.5

4.5

4.5

4.5

V