STU314D datasheet(1/11 Pages) SAMHOP

Part #	STU314D

Description	Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	SAMHOP [SamHop Microelectronics Corp.]

Direct Link	http://www.samhop.com.tw

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1 / 11 page

S mHop Microelectronics C orp.

a

STU314D

Symbol

VDS

VGS

IDM

EAS

W

A

PD

°C

10.4

-55 to 150

ID

Units

Parameter

30

16

47

V

±20

TC=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

mJ

PRODUCT SUMMARY (N-Channel)

VDSS

ID

RDS(ON) (m

Ω) Max

30V

16A

40 @ VGS=4.5V

28 @ VGS=10V

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

N-Channel

Drain Current-Continuous

a

-Pulsed

b

A

Sigle Pulse Avalanche Energy

d

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

www.samhop.com.tw

Feb,04,2009

1

Details are subject to change without notice.

60

°C/W

Thermal Resistance, Junction-to-Ambient

R JA

a

TC=25°C

TO-252-4L

D1/D2

S 1

G 1

S 2

G 2

N-ch

P -ch

G 1

D1

S 1

G 2

D2

S 2

PRODUCT SUMMARY (P-Channel)

VDSS

ID

RDS(ON) (m

Ω) Max

-30V

-14A

55 @ VGS=-4.5V

34 @ VGS=-10V

-30

-14

-42

±20

P-Channel

TC=70°C

A

13

-11

6.7

W

TC=70°C

12

°C/W

Thermal Resistance, Junction-to-Case

R JC

a

Ver 1.0

16

64

Green

Product

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STU314D Datasheet(PDF) 1 Page - SamHop Microelectronics Corp.

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