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STUD438A Datasheet(PDF) 1 Page - SamHop Microelectronics Corp. |
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STUD438A Datasheet(HTML) 1 Page - SamHop Microelectronics Corp. |
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1 / 8 page ![]() S mHop Microelectronics C orp. a PRODUCT SUMMARY VDSS ID RDS(ON) (m Ω) Max 40V 47A 11 @ VGS=4.5V 9 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO251 Package. N-Channel Logic Enhancement Mode Field Effect Transistor www.samhop.com.tw Mar,15,2010 1 Details are subject to change without notice. G G S S STU SERIES TO - 252AA( D- PAK ) G G S S D D STD SERIES TO - 251( I - PAK ) STU/D438A Ver 1.0 Green Product Symbol VDS VGS IDM EAS W A PD °C 27 -55 to 150 ID Units Parameter 40 47 138 V V ±20 TC=25°C Gate-Source Voltage Drain-Source Voltage THERMAL CHARACTERISTICS mJ ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limit Drain Current-Continuous a -Pulsed b A Sigle Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range TJ, TSTG 50 °C/W Thermal Resistance, Junction-to-Ambient R JA TC=25°C 3 °C/W Thermal Resistance, Junction-to-Case R JC A TC=70°C 38 TC=70°C W 42 a a 169 |
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