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RF5122

DS110617

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Absolute Maximum Ratings

Parameter

Rating

Unit

Supply Voltage

-0.5 to +5.0

V

DC

Power Control Voltage (V

-0.5 to 3.5

V

DC Supply Current

400

mA

Input RF Power

+5

dBm

Operating Ambient Temperature

-30 to +85

°C

Storage Temperature

-40 to +150

°C

Moisture sensitivity

JEDEC Level 2

ESD HBM

450

V

MM

50

V

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Overall

Frequency=2450MHz,

circuit per evaluation board schematic, unless

otherwise specified

Frequency

2.40

2.50

GHz

IEEE802.11g

IEEE802.11n

Output Power

18

dBm

At max data rate, OFDM modulation

EVM*

2.5

4

%

RMS, mean

Gain

24.5

25.5

dB

Gain Variance

1.25

±dB

-30°C to +85°C

Power Detector

0.4

0.7

V

1.25

1.35

1.50

V

Current

Operating

120

145

mA

Quiescent

85

mA

Data rate @<3.5% EVM RMS, mean,

T=-30°C to +50°C

2

mA

Shutdown

10

A

Power Supply

3.0

3.3

3.6

Operating Range

2.75

2.8

2.9

Operating Range

Output VSWR

10:1

Input Return Loss

-15

-10

dB

Turn-on Time**

0.5

1.0

S

Output stable to within 90% of final gain

Second Harmonic

-27

dBm

Fundamental frequency is between 2400MHz

Notes:

*The EVM specification is obtained with a signal generator that has an EVM floor of less than 0.7%.

**The PA must operate with gated bias voltage input at 1% to 99% duty cycles without any EVM or other parameter degradation.

Note 2: For best harmonic rejection please refer to the harmonic rejection application schematic.

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

RoHS status based on EUDirective2002/95/EC (at time of this document revision).

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.