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RFCM2680 Datasheet(PDF) 2 Page - RF Micro Devices

Part # RFCM2680
Description  45MHz TO 1003MHz GaAs/GaN POWER DOUBLER MODULE
PDF  6 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFCM2680 Datasheet(HTML) 2 Page - RF Micro Devices

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RFCM2680
DS120518
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Voltage (single tone; on
evaluation board)
60
dBmV
DC Supply Over-Voltage (5 minutes)
30
V
Storage Temperature
-40 to +100
°C
Operating Mounting Base Temperature
-30 to +100
°C
l
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω;
IDC = IDC Typical
Power Gain
21.0
21.5
22.0
dB
f = 45MHz
22.5
23.0
24.0
dB
f = 1003MHz
Slope[1]
1.0
1.5
2.5
dB
f = 45MHz to 1003MHz
Flatness of Frequency Response
1
dB
f = 45MHz to 1003MHz (Peak to Valley)
Input Return Loss
20
dB
f = 45MHz to 320MHz
19
dB
f = 320MHz to 640MHz
18
dB
f = 640MHz to 870MHz
16
dB
f = 870MHz to 1003MHz
Output Return Loss
20
dB
f = 45MHz to 320MHz
19
dB
f = 320MHz to 640MHz
18
dB
f = 640MHz to 870MHz
17
dB
f = 870MHz to 1003MHz
Noise Figure
3.0
4.0
dB
f = 50MHz to 1003MHz
Output P1dB
32
dBm
Output IP3
49
dBm
6MHz tone spacing at 16dBm/tone
Total Current Consumption (DC)
430.0
450.0
mA
Distortion data 40MHz to
550MHz
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω;
IDC = IDC typical
CTB
-73
-69
dBc
VO = 60dBmV at 1003MHz, 18dB extrapolated
tilt, 79 analog channels plus 75 digital chan-
nels (-6dB offset)[2][4]
XMOD
-66
-61
dBc
CSO
-75
-65
dBc
CIN
55
58
dB
Distortion data 40MHz to
550MHz
V+ = 24V; TMB = 30°C; ZS = ZL = 75Ω;
IDC = 370mA
CTB
-73
dBc
VO = 57dBmV at 1003MHz, 18dB extrapolated
tilt, 79 analog channels plus 75 digital chan-
nels (-6dB offset)[3][4]
XMOD
-67
dBc
CSO
-76
dBc
CIN
59
dB
[1] The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
[2] 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +42dBmV to +51.4dBmV tilted output level, plus 75 digital
channels, -6dB offset relative to the equivalent analog carrier.
[3] 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +39dBmV to +48.4dBmV tilted output level, plus 75 digital
channels, -6dB offset relative to the equivalent analog carrier.
[4] Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite Triple Beat
(CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband (selective
voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN parameter is
defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.



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