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RFCM3050 Datasheet(PDF) 2 Page - RF Micro Devices

Part # RFCM3050
Description  40-1003MHZ GAAS/GAN POWER DOUBLER MODULE
PDF  6 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFCM3050 Datasheet(HTML) 2 Page - RF Micro Devices

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RFCM3050
40-1003MHZ GAAS/GAN
POWER DOUBLER MODULE
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless ConnectivityTM, PowerStar®, POLARISTM TOTAL RADIOTM and UltimateBlueTM are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.
DS130621
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com
2 of 6
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Voltage (single tone)
70
dBmV
DC Supply Over-Voltage (5 minutes)
30
V
Storage Temperature
-40 to +100
°C
Operating Mounting Base Temperature
-30 to +100
°C
1.
The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2.
79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +43dBmV to +50dBmV tilted output level, plus 75 digital
channels, -6dB offset relative to the equivalent analog carrier.Composite Second Order (CSO) - The CSO parameter (both sum and
difference products) is defined by the NCTA.Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA.Cross Modulation
(XMOD) - Cross modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the car-
rier being tested.Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to
noise).
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
V+= 24V; TMB=30°C; ZS=ZL=75Ω
Power Gain
23.5
24.0
24.5
dB
f=50MHz
24.5
25.0
26.0
dB
f=1003MHz
Slope[1]
0.5
1.0
2.0
dB
f=40MHz to 1003MHz
Flatness of Frequency Response
0.8
dB
f=40MHz to 1003MHz
Input Return Loss
-20
dB
f=40MHz to 320MHz
-18
dB
f=320MHz to 640MHz
-17
dB
f=640MHz to 870MHz
-16
dB
f=870MHz to 1003MHz
Output Return Loss
-20
dB
f=40MHz to 320MHz
-19
dB
f=320MHz to 640MHz
-18
dB
f=640MHz to 870MHz
-17
dB
f=870MHz to 1003MHz
Noise Figure
5.0
5.5
dB
f=50MHz to 1003MHz
Total Current Consumption (DC)
420.0
440.0
mA
Distortion data 40MHz to 550MHz
V+= 24V; TMB=30°C; ZS=ZL=75Ω
CTB
-75
-70
dBc
VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79
analog channels plus 75 digital channels (-6dB offset)[2]
XMOD
-70
-65
dBc
VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79
analog channels plus 75 digital channels (-6dB offset)[2]
CSO
-70
-65
dBc
VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79
analog channels plus 75 digital channels (-6dB offset)[2]
CIN
60
66
dB
VO=56.4dBmV at 1000MHz, 13.4dB extrapolated tilt, 79
analog channels plus 75 digital channels (-6dB offset)[2]



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