ZTX751 datasheet(4/7 Pages) DIODES

4 / 7 page

ZTX751

Document number: DS36459 Rev. 3 - 2

4 of 7

www.diodes.com

July 2013

ZTX751

A Product Line of

Diodes Incorporated

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-80

—

IC = -100µA

Collector-Emitter Breakdown Voltage (Note 10)

BVCEO

-60

—

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

—

IE = -100µA

Collector Cut-off Current

ICBO

—

-0.1

-10

µA

VCB = -60V

VCB = -60V,Tamb = +100°C

Emitter Cut-off Current

IEBO

—

-0.1

µA

VEB = -6V

Collector-Emitter Saturation Voltage (Note 10)

VCE(sat)

—

-150

-280

-300

-500

IC = -1A, IB = -100mA

IC =-2A, IB = -200mA

Base-Emitter Saturation Voltage (Note 10)

VBE(sat)

—

-0.9

-1.25

IC = -1A, IB = -100mA

Base-Emitter Turn-On Voltage (Note 10)

VBE(on)

—

-0.8

-1

IC = -1A, VCE = -2V

DC Current Gain (Note 10)

hFE

100

200

170

—

300

—

IC = -50mA, VCE = -2V

IC = -500mA, VCE = -2V

IC = -1A, VCE = -2V

IC = -2A, VCE = -2V

Current Gain-Bandwidth Product (Note 10)

100

140

—

MHz

VCE = -5V, IC = -100mA

f = 100MHz

Output Capacitance (Note 10)

Cobo

—

VCB = -10V. f = 1MHz

Turn-On Times

ton

—

IC = -500mA, IB1 = IB2 = -50mA,

VCC = -10V

Turn-Off Times

toff

—

450

—

Note:

10. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle

≤2%

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