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RFPA2089 Datasheet(PDF) 3 Page - RF Micro Devices

Part # RFPA2089
Description  InGaP HBT POWER AMPLIFIER 0.25W, 50MHz to 2700MHz
PDF  16 Pages
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Manufacturer  RFMD [RF Micro Devices]
Direct Link  http://www.rfmd.com
Logo RFMD - RF Micro Devices

RFPA2089 Datasheet(HTML) 3 Page - RF Micro Devices

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RFPA2089
DS130211
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ((+1) 336-678-5570 or c
customerservice@rfmd.com.
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
LTE Bands 7, 15, 16
(2.58GHz to 2.69GHz)
VCC = 5.0V, ICQ = 138mA
Frequency
2.58
2.64
2.69
GHz
EVB tuned for optimum 60dBc ACPR
Input Power (Pin)
11
dBm
Max recommended continuous input power,
VCC < 5.25V, Load VSWR < 2:1
Gain (S21)
17.5
dB
P1dB
24.7
dBm
EVB tuned for linear operation
Input Return Loss (S11)
20
dB
Output Return Loss (S22)
9.5
dB
Noise Figure
3.9
dB
WCDMA Channel Power at -60dBc
ACPR
13.3
dBm
3GPP 3.5, Test Model 1, 64 DPCH
Power Supply
Operating Current (Quiescent)
138
mA
At VS = 5.0V with dropping R = 3.9:
Operating Voltage (VCC)
5.0
5.25
V
Max recommended collector voltage for contin-
uous operation
Thermal Resistance (RTH)
52
C/W
Junction to Pin 4



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