The RF Line

Microwave Pulse

Power Transistors

Designed for Class A and AB common emitter amplifier applications in the

low–power stages of IFF, DME, TACAN, radar transmitters, and CW systems.

• Guaranteed Performance @ 1090 MHz, 18 Vdc — Class A

Output Power = 0.2 Watt

Minimum Gain = 10 dB

• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

• Industry Standard Package

• Nitride Passivated

• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

• Internal Input Matching for Broadband Operation

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

20

Vdc

Collector–Base Voltage

50

Vdc

Emitter–Base Voltage

3.5

Vdc

Collector Current — Continuous

200

mAdc

Derate above 25

°C

7.0

40

Watts

mW/

°C

Storage Temperature Range

–65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case (2)

25

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

20

—

—

Vdc

Collector–Emitter Breakdown Voltage

50

—

—

Vdc

Collector–Base Breakdown Voltage

50

—

—

Vdc

Emitter–Base Breakdown Voltage

3.5

—

—

Vdc

Collector Cutoff Current

—

—

0.5

mAdc

ON CHARACTERISTICS

DC Current Gain

10

—

100

—

1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.

2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

MRF1000MB

0.7 W, 960–1215 MHz

CLASS A/AB

MICROWAVE POWER

TRANSISTORS

NPN SILICON

CASE 332A–03, STYLE 2

Order this document

by MRF1000MB/D

SEMICONDUCTOR TECHNICAL DATA

1

Replaces MRF1000MA/D