MRF175GV datasheet(2/11 Pages) MACOM

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ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS (1)

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)

VGS(th)

1.0

3.0

6.0

Vdc

Drain–Source On–Voltage (VGS = 10 V, ID = 5.0 A)

VDS(on)

0.1

0.9

1.5

Vdc

Forward Transconductance (VDS = 10 V, ID = 2.5 A)

gfs

2.0

3.0

—

mhos

DYNAMIC CHARACTERISTICS (1)

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Ciss

—

180

—

Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Coss

—

200

—

Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Crss

—

FUNCTIONAL CHARACTERISTICS — MRF175GV (2) (Figure 1)

Common Source Power Gain

(VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)

Gps

—

Drain Efficiency

(VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA)

—

Electrical Ruggedness

(VDD = 28 Vdc, Pout = 200 W, f = 225 MHz, IDQ = 2.0 x 100 mA,

VSWR 10:1 at all Phase Angles)

No Degradation in Output Power

NOTES:

1. Each side of device measured separately.

2. Measured in push–pull configuration.

Figure 1. 225 MHz Test Circuit

C1 — Arco 404, 8.0–60 pF

C2, C3, C7, C8 — 1000 pF Chip

C4, C9 — 0.1

µF Chip

C5 — 180 pF Chip

C6 — 100 pF and 130 pF Chips in Parallel

C10 — 0.47

µF Chip, Kemet 1215 or Equivalent

L1 — 10 Turns AWG #16 Enamel Wire, Close

L1 — Wound, 1/4

″ I.D.

L2 — Ferrite Beads of Suitable Material for

L2 — 1.5–2.0

µH Total Inductance

Board material — .062

″ fiberglass (G10),

Two sided, 1 oz. copper,

εr ^ 5

Unless otherwise noted, all chip capacitors

are ATC Type 100 or Equivalent.

R1 — 100 Ohms, 1/2 W

R2 — 1.0 k Ohm, 1/2 W

T1 — 4:1 Impedance Ratio RF Transformer.

T1 — Can Be Made of 25 Ohm Semirigid Coax,

T1 — 47–52 Mils O.D.

T2 — 1:9 Impedance Ratio RF Transformer.

T2 — Can Be Made of 15–18 Ohms Semirigid

T2 — Coax, 62–90 Mils O.D.

NOTE: For stability, the input transformer T1 should be loaded

NOTE: with ferrite toroids or beads to increase the common

NOTE: mode inductance. For operation below 100 MHz. The

NOTE: same is required for the output transformer.

BIAS 0-6 V

D.U.T.

C10

28 V

REV 8

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