RFHA1023A datasheet(2/10 Pages) RFMD

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RFHA1023A

Proposed

Prelim DS110622

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Absolute Maximum Ratings

Parameter

Rating

Unit

Drain Voltage (VD)150

Gate Voltage (VG)-8 to +2

Gate Current (IG)155

Operational Voltage

Ruggedness (VSWR)

10:1

Storage Temperature Range

-55 to +125

°C

Operating Temperature Range (TC)-40 to +85

°C

Operating Junction Temperature (TJ)200

°C

Human Body Model

Class 1A

MTTF (TJ< 200 °C, 95% Confidence

Limits)*

3E + 06

Hours

Thermal Resistance, RTH (junction to case):

TC=85 °C, DC bias only

0.90

°C/W

TC=85 °C, 100Ps pulse, 10%

duty cycle

0.30

°C/W

* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.

Refer to product qualification report for FIT(random) failure rate.

Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage

and current must not exceed the maximum operating values.

Bias Conditions should also satisfy the following expression: PDISS<(TJ-TC)/RTH J-C and TC=TCASE

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Recommended Operating Conditions

Drain Voltage (VDSQ)36

Gate Voltage (VGSQ)-8

-3

-2

Drain Bias Current

440

Frequency of Operation

1200

1400

MHz

DC Functional Test

IG (OFF) – Gate Leakage

VG=-8V, VD=0V

ID (OFF) – Drain Leakage

2.5

VG=-8V, VD=36V

VGS (TH) – Threshold Voltage

-4.2

VD=36V, ID=40mA

VDS (ON) – Drain Voltage at High

Current

0.13

VG=0V, ID=1.5A

RF Functional Test

[1], [2]

Small Signal Gain

f =1200MHz, PIN=30dBm

Power Gain

12.5

f =1200MHz, PIN=41.2dBm

Input Return Loss

-8

-6

f =1200MHz, PIN=41.2dBm

Output Power

53.7

dBm

f =1200MHz, PIN=41.2dBm

Drain Efficiency

f =1200MHz, PIN=41.2dBm

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

RoHS (Restriction of Hazardous Substances): Compliant per EU Directive

2002/95/EC.

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