MRF275 datasheet(2/16 Pages) MACOM

2 / 16 page

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(VGS = 0, ID = 50 mA)

V(BR)DSS

—

Vdc

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)

IDSS

—

Gate–Source Leakage Current

(VGS = 20 V, VDS = 0)

IGSS

—

µA

ON CHARACTERISTICS (1)

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)

VGS(th)

1.5

2.5

4.5

Vdc

Drain–Source On–Voltage (VGS = 10 V, ID = 5 A)

VDS(on)

0.5

0.9

1.5

Vdc

Forward Transconductance (VDS = 10 V, ID = 2.5 A)

gfs

3.75

—

mhos

DYNAMIC CHARACTERISTICS (1)

Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)

Ciss

—

135

—

Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)

Coss

—

140

—

Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz)

Crss

—

FUNCTIONAL CHARACTERISTICS (2) (Figure 1)

Common Source Power Gain

(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA)

Gps

11.2

—

Drain Efficiency

(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA)

—

Electrical Ruggedness

(VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA,

VSWR 30:1 at all Phase Angles)

No Degradation in Output Power

1. Each side of device measured separately.

2. Measured in push–pull configuration.

REV 1

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