OFF CHARACTERISTICS

Designed primarily for high-voltage applications as a high-power linear

amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

• Specified 50 Volt, 30 MHz Characteristics —

Output Power = 150 W (PEP)

Minimum Gain = 13 DB

Efficiency = 45%

• Intermodulation Distortion @ 150 W (PEP) —

IMD = -32 db (Max)

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

@ 150 W CW

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

55

Vdc

Collector-Base Voltage

110

Vdc

Emitter-Base Voltage

4.0

Vdc

Collector Current — Continuous

20

Adc

Withstand Current — 10 s

—

30

Adc

Derate above 25 °C

320

1.83

Watts

W/°C

Storage Temperature Range

-65 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

THERMAL CHARACTERISTICS

NPN Silicon

RF Power Transistor

The RF Line

SEMICONDUCTOR TECHNICAL DATA

MRF428

150 W (PEP), 30 MHz

RF POWER

TRANSISTOR

NPN SILICON

Order this document

by MRF428/D

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.5

°C/W

1

55

—

—

Vdc

110

—

—

Vdc

110

—

—

Vdc

4.0

—

—

Vdc

(continued)