The RF Line

NPN Silicon

RF Power Transistor

Designed primarily for high–voltage applications as a high–power linear

amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

• Specified 50 Volt, 30 MHz Characteristics —

Output Power = 150 W (PEP)

Minimum Gain = 13 dB

Efficiency = 45%

• Intermodulation Distortion @ 150 W (PEP) —

IMD = –32 dB (Max)

• Diffused Emitter Resistors for Superior Ruggedness

• 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

@ 150 W CW

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

50

Vdc

Collector–Base Voltage

100

Vdc

Emitter–Base Voltage

4.0

Vdc

Collector Current — Continuous

16

Adc

Withstand Current — 10 s

—

20

Adc

Derate above 25

°C

233

1.33

Watts

W/

°C

Storage Temperature Range

–65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.75

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

50

—

—

Vdc

100

—

—

Vdc

100

—

—

Vdc

4.0

—

—

Vdc

(continued)

MRF429

150 W (LINEAR), 30 MHz

RF POWER

TRANSISTOR

NPN SILICON

CASE 211–11, STYLE 1

Order this document

by MRF429/D

SEMICONDUCTOR TECHNICAL DATA

1