2 of 6

DS121024

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

SPA1118Z

Absolute Maximum Ratings

Parameter

Rating

Unit

750

mA

6.0

V

Max RF Input Power

24

dBm

°C

Max Storage Temp

+150

°C

Moisture Sensitivity Level

3

MSL

Operation of this device beyond any one of these limits may cause permanent dam-

age. For reliable continuous operation, the device voltage and current must not

exceed the maximum operating values specified in the table on page one.

Bias Conditions should also satisfy the following expression:

Caution! ESD sensitive device.

Exceeding any one or a combination of the Absolute Maximum Rating conditions may

cause permanent damage to the device. Extended application of Absolute Maximum

Rating conditions to the device may reduce device reliability. Specified typical perfor-

mance or functional operation of the device under Absolute Maximum Rating condi-

tions is not implied.

The information in this publication is believed to be accurate and reliable. However, no

responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any

infringement of patents, or other rights of third parties, resulting from its use. No

license is granted by implication or otherwise under any patent or patent rights of

RFMD. RFMD reserves the right to change component circuitry, recommended appli-

cation circuitry and specifications at any time without prior notice.

RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free

per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric

materials and red phosphorus as a flame retardant, and <2% antimony in

solder.

20

22

24

26

28

30

32

0.85

0.87

0.89

0.91

0.93

0.95

25 C

85 C

-4 0 C

10

12

14

16

18

20

22

0.8 5

0.87

0.89

0.91

0.93

0 .95

25C

85C

-4 0 C

-4 0

-3 5

-3 0

-2 5

-2 0

-1 5

-1 0

-5

0

0.85

0.87

0.89

0 .91

0.93

0 .95

S1 1

S1 2

S2 2

-75

-70

-65

-60

-55

-50

-45

17

18

19

20

21

22

23

24

-40C

85C

25C

P1dB vs. Frequency

GHz

IS-95 @ 880 MHz

Adj. Channel Pwr. vs. Channel Output Pwr.

dBm

GHz

Gain vs. Frequency

Input/Output Return Loss,

Isolation vs. Frequency, T=25

°C

GHz

0

50

100

150

200

250

300

350

400

450

01

2

3

45

25C

-40C

85C

Device Current vs. Source Voltage

V