2014. 2. 07

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SEMICONDUCTOR

TECHNICAL DATA

MJE13005DF

TRIPLE DIFFUSED NPN TRANSISTOR

Revision No : 3

HIGH VOLTAGE HIGH SPEED POWER SWITCH

APPLICATION.

・Built-in Free wheeling Diode makes efficient anti saturation operation.

・Suitable for half bridge light ballast Applications.

・Low base drive requirement.

MAXIMUM RATING (Ta=25

℃)

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

800

V

Collector-Emitter Voltage

400

V

Emitter-Base Voltage

10

V

Collector Current

DC

5

A

Pulse

10

Base Current

2

A

Collector Power Dissipation (Tc=25

℃)

30

W

Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

-

-

10

μA

-

-

10

μA

Collector-Base Breakdown Voltage

800

-

-

V

Emitter-Base Breakdown Voltage

10

-

-

V

DC Current Gain

18

-

35

8

-

-

Collector-Emitter Saturation Voltage

-

-

0.5

V

-

-

0.6

-

-

1

Base-Emitter Saturation Voltage

-

-

1.2

V

-

-

1.6

Collector Output Capacitance

-

65

-

pF