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2SD1618 Datasheet(PDF) 2 Page - ON Semiconductor |
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2SD1618 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() 2SD1618 No.1784-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=15V, IE=0A 0.1 μA Emitter Cutoff Current IEBO VEB=4V, IC=0A 0.1 μA DC Current Gain hFE1VCE=2V, IC=50mA 140* 560* hFE2VCE=2V, IC=500mA 60 Gain-Bandwidth Product fT VCE=10V, IC=50mA 250 MHz Collector-to-Emitter Saturation Voltage VCE(sat)1 IC=5mA, IB=0.5mA 10 25 mV VCE(sat)2 IC=100mA, IB=10mA 30 80 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA 0.8 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10μA, IE=0A 20 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 15 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10μA, IC=0A 5 V Output Capacitance Cob VCB=10V, f=1MHz 8 pF * : The 2SD1618 is classified by 50mA hFE as follows : Rank S T U hFE 140 to 280 200 to 400 280 to 560 Ordering Information Device Package Shipping memo 2SD1618S-TD-E PCP 1,000pcs./reel Pb Free 2SD1618T-TD-E PCP 1,000pcs./reel |
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